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Journals and Conferences
Uniform layers of cadmium telluride have been successfully grown hetero-epitaxially on germanium seeds up to 100 mm in diameter. X-ray diffraction studies show high structural quality for layers up to 1.4 mm thick. By doping with chlorine, resistivities up to 1 × 10<sup>9</sup> Ωcm have been achieved.
In-situ laser reflectance measurements and photography have been made during the hetero-epitaxial nucleation and growth of cadmium zinc telluride on GaAs seeds. Fabry-Pèrot oscillations are observed in the reflectance signal which persist up to several tens of micrometres layer thickness and the average reflected intensity provides information on the… (More)