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Journals and Conferences
An overview of the advanced (45 nm and beyond) ion implant and USJ metrology applications using the modulated optical reflectance (MOR) technology is provided.
The introduction of millisecond annealing in advanced CMOS process flows turns out to generate considerable temperature variations which can enhance the device dispersion. In the present work we… (More)
A new advanced application of the therma-probe systems for high-resolution mapping of implant and anneal non-uniformities is described.
In the present work we report on Therma-Probe (TP) measurements to quantify the residual lattice damage after sub-melt laser annealing for different Ge pre-amorphization implant (PAI) conditions. The… (More)