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Free radical-based oxidation has been detected in the normal operating regime of the Gaulin homogenizer, demonstrating that cavitation occurs in this important industrial bioprocessing equipment. Free radical generation is suppressed by imposition of back pressure, proving that such cavitation occurs in the impingement section. The calculated value of the(More)
Conventional nitride/oxide (NO)-based storage dielectric has been demonstrated to possess the capability to extend its employment in trench dynamic random access memory (DRAM) by additional NH3 nitridation and in situ N2O reoxidation. Through this technique, cell capacitance could be enhanced by 12.2% as compared with NO dielectric while preserving(More)
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