Alessandro Chini

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A C-band low-noise amplifier (LNA) is designed and fabricated using GAN HEMT power devices. The one-stage amplifier has a measured noise figure of 1.6 dB at 6 GHz, with an associated gain of 10.9 dB and IIP3 of 13 dBm. it also exhibits broadband operation from 4–8 GHz with noise figure less than 1.9 dB. The circuit can endure up to 31 dBm power from the(More)
A 36-dBm high-linearity single-ended commonsource class-B monolithic-microwave integrated-circuit power amplifier is reported in GaN high electron-mobility transistor technology. We also describe the design and simulation of highly linear and highly efficient common-source and common-drain class-B power amplifiers. Single-ended class-B amplifiers with(More)
The reliability of GaN HEMTs under RF stress has been evaluated and correlated with DC stress and current DLTS measurements techniques. During RF operation a degradation of output power, PAE and an increase in reverse gate current has been observed. A similar degradation has been observed by applying reverse biases to the gate terminal under DC operation,(More)
Several groups have demonstrated nitride-based High Electron Mobility Transistors with excellent rf output power, with a constant increase in performances. However, despite the large efforts spent in the last few years, and the progress in MTTF (Mean Time To Failure) values, reliability of GaN HEMTs (High Electron Mobility Transistors) and MMICs (Millimeter(More)
The GaN high-electron mobility transistor (HEMT) structure has been widely investigated, particularly for radiofrequency applications. This structure is suitable for highfrequency switching applications in power electronics because of the high breakdown field of GaN and the high mobility of the channel. In this paper, a physical model for predicting the(More)
A high linearity MMIC RF power amplifier is reported in the AlGaN/GaN HEMT technology. In order to obtain high linearity, a pre-linearization gate diode is added at the input to compensate for the nonlinear input capacitance Cgs of the GaN HEMT device. Another single-ended Class B power amplifier without the gate diode is also designed for comparison. The(More)
A 36-dBm, high-linearity, single-ended Class B MMIC power amplifier is reported in GaN HEMT technology. The circuit demonstrates high linearity, greater than 35 dBc of third-order intermodulation (IM3) suppression and high power added efficiency (PAE) of 34%. We demonstrate experimentally that Class B power amplifiers can achieve IM3 suppression comparable(More)
One of the main expected benefits of AlGaN HEMT technology for microwave applications is related to the higher operating bias voltage achievable with these devices. However, various technological issues, concerning material properties and device technology must be properly tailored to fully exploit the potential of that kind of devices. In this work we(More)