Alessandro Betti

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We present a novel method for the evaluation of shot noise in quasi one-dimensional fieldeffect transistors, such as those based on carbon nanotubes and silicon nanowires. The method is derived by using a statistical approach within the second quantization formalism and allows to include both the effects of Pauli exclusion and Coulomb repulsion among charge(More)
We propose that lateral heterostructures of single-atomic-layer graphene and hexagonal boron-carbon-nitrogen (hBCN) domains, can represent a powerful platform for the fabrication and the technological exploration of real two-dimensional field-effect transistors. Indeed, hBCN domains have an energy bandgap between 1 and 5 eV, and are lattice-matched with(More)
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