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This paper introduces an advanced methodology for fast 3-D TCAD electrothermal simulation for the analysis of complex power devices including package and cooling assemblies. The proposed methodology is based on coupling a 3-D finite element method (FEM) thermal model of the package, 3-D FEM electrical model of the metallization layers and circuit electrical(More)
This is first demonstrated using a full 3-D approach, where a global model includes a part of a solar cell with a textured surface. Due to device complexity, many of them cannot be simulated in the full 3-D setup within a reasonable amount of time. Therefore, derived solutions are proposed, which are based on the combined-mode setup coupling the 3-D TCAD(More)
Automated interaction of SDevice and HSpice for fast 3D electro-thermal simulation based on the relaxation method is designed. The features and limitations of the method are analyzed and presented. A power vertical super-junction MOSFET under the unclamped inductive switching (UIS) test of device robustness is used to perform validation of the designed(More)
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