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With the commissioning of the latest 10-Gb/s systems, vendors are now in the process of developing architectures for their next-generation products. 40-Gb/s components and subsystems are currently in… (More)
Innovative design, modeling, and characterization methods are described for FET cold noise sources. A developed InP HEMT cold/hot noise source demonstrates 105 K in the 18-22 GHz range; the highest… (More)
With the new and i n c r e a s i n g demand of the Internet and multimedia on the commercial side, and the broadband high data rate communications links on the aerospace and military side, RF and… (More)
A systematic procedure is described for determination of GaAs PIN diode equivalent circuit models from measured S-parameter data combined with an electromagnetic analysis of the feed structure. A new… (More)
A new bias-dependent small-signal GaAs PIN diode model is described that is suitable for use in design of circuits like variable attenuators and limiters. The equivalent circuit parameters are… (More)