Aleksey Gorobchuk

We don’t have enough information about this author to calculate their statistics. If you think this is an error let us know.
Learn More
The effect of RF discharge structure on silicon etching process in CF<inf>4</inf>/O<inf>2</inf> mixture was studied. The calculations were carried out based on an advanced mathematical model of plasma-chemical reactor with taking into account a peculiarities of RF discharge plasma. The model includes the equations of multicomponent physical-chemical(More)
The effect of O<sub>2</sub> additive concentration on silicon etching process in a tetrafluoromethane-oxygen mixture is investigated on the base of numerical modeling. The calculations were carried out using an advanced mathematical model of a plasma-chemical reactor. The model takes into account peculiarities of plasma kinetics in a RF-discharge. The gas(More)
Male rats were exposed to single or repeated (19 days) cold treatment (4°C) and non-cold stress (60-min shaking on a laboratory shuttle device). Retabolil had a hypotensive effect, which was accompanied by the prevention of a stress-induced increase in the concentration of a hypertensive hormone aldosterone. Under conditions of repeated stress, these(More)
  • 1