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Journals and Conferences
We report on a state-of-the-art monolithically integrated heterostructure barrier varactor (HBV) frequency tripler operating in the W-band frequency range. The device utilizes series connection of… (More)
In this letter, we present a fixed tuned 175 GHz frequency quintupler with 60 mW output power. The peak efficiency is 6.3% and the 3 dB bandwidth is 8 GHz. The multiplier is based on a single… (More)
We present an integrated heterostructure barrier varactor frequency tripler on silicon substrate. The InGaAs/InAlAs/AlAs material structure is transferred onto the silicon wafer using low-temperature… (More)
We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler ( 5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto… (More)
We present progress and status of Heterostructure Barrier Varactor multiplier sources and development of integrated Schottky diode mixers for submillimeter wave applications.
We report on the RF characterization of a monolithically integrated III-V Heterostructure Barrier Varactor (HBV) frequency tripler on a silicon substrate. A process of a low-temperature… (More)
There is a high demand for compact, room-temperature sources operating at millimeter-wave and terahertz (THz) frequencies for space instruments and terrestrial applications. This part of the… (More)
We present a silicon integrated Heterostructure Barrier Varactor (HBV) frequency quintupler ( ×5) operating between 440 GHz and 490 GHz. By epitaxial transfer of InP-based HBV material structure onto… (More)
We present an overview of research on integrated diode circuits for terahertz applications carried out at Chalmers University of Technology. This includes progress on heterogeneous integration of… (More)
We present the development of integrated submillimeter wave receivers and transmitters based on Schottky- and HBV-diode technology at Chalmers University of technology.