Alberto Pozza

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This paper reports on the electrical characterization of the first prototypes of Geiger-Mode Avalanche Photodiodes (GM-APDs) and Silicon Photomultipliers (SiPMs) produced at ITC-irst, Trento. Both static and functional measurements have been performed in dark condition. The static tests, consisting in reverse and forward IV measurements, have been performed(More)
Silicon photomultipliers (SiPMs) with quantum efficiency maximized for a wavelength between 420 and 470 nm have been developed at ITC-irst Trento (Italy), and are being tested for their application in the construction of a ultra high resolution small animal PET tomograph. The devices have an area of 1 mm times 1 mm and 625 microcells. The breakdown voltage(More)
Flash memories are the most important among modern nonvolatile memory technologies. We are showing new results on the threshold voltage shifts in Flash memory arrays after “CO irradiation. A (relatively) high total dose, exceeding 100krad(SiO1), is needed to induce errors in the array, but threshold voltage shifts are all but negligible even at lower doses.(More)
Temperature coefficients (TCs) of photovoltaic (PV) modules play an important role in distinguishing between products in an increasingly competitive market. However, measurement setups vary greatly, and interlaboratory comparisons show deviations from the mean of around ±10-15%, or even larger, for temperature coefficients of maximum power.(More)
The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 10 cm 2 s 1 will present severe challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10 ns as well as the(More)
Silicon photomultipliers (SiPMs) with quantum efficiency maximized for a wavelength between 420 and 470 nm have been developed at ITC-irst Trento (Italy), and are being tested for their application in the construction of a ultra high resolution small animal PET tomograph. The devices have an area of 1 mm times 1 mm and 625 microcells. The breakdown voltage(More)
In this paper we report briefly on the development of Silicon Photomultipliers at ITC-irst. First, details on the technology and geometry are given. Then, experimental data are shown including static IV characterization, signal characterization, noise properties and photodetection efficiency.
The proposed luminosity upgrade of the Large Hadron Collider (S-LHC) at CERN will demand the innermost layers of the vertex detectors to sustain fluences of about 10 hadrons/cm. Due to the high multiplicity of tracks, the required spatial resolution and the extremely harsh radiation field new detector concepts and semiconductor materials have to be explored(More)
Position sensitive transient current technique (TCT) evaluation of irradiated 3D single column type detectors is presented. The detectors produced by ITC-irst were irradiated with neutrons to 1times10<sup>14</sup> , 5times10<sup>14</sup> and 5times10<sup>15</sup> ncm<sup>-2</sup> . A pulsed IR laser light focused to a spot of 6 mum and scanned over the(More)
Flash memories are the most important among modern nonvolatile memory technologies. We are showing new results on the threshold voltage shifts in Flash memory arrays after /sup 60/Co irradiation. A (relatively) high total dose, exceeding 100 krad (SiO/sub 2/), is needed to induce errors in the array, but threshold voltage shifts are all but negligible even(More)
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