Alain Toureille

Learn More
The presence of space charge changes locally the electric field distribution in power cable insulation and may play an important role in tree development, thus accelerating the dielectric breakdown. This paper is concerned with the computation of the electric field in polyethylene-insulated power cables affected by water trees which grow from the following:(More)
This work is concerned with a facility for characterizing the insulation of power cables whilst submitted to high dc voltage. The presented tool allows to measure the real distribution of the electric field in the cable insulation, which can be significantly different from the capacitive (Laplace) field repartition, and is of interest in insulation design(More)
The thermal step method is a non destructive electric charge measurement technique, based on the acquisition of a capacitive current appearing when an insulating structure is crossed by a low amplitude thermal wave. Elements concerning the electrostatic behavior of a metal-oxide-semiconductor structure while crossed by a thermal wave are addressed in the(More)
This paper proposes a technique for determining the distributions of the electric field and space charge in the insulation of power cables by using the data acquired with the thermal step method (TSM). The TSM consists of applying a low-temperature step to a short-circuited or dc-energized cable and of acquiring a transient capacitive current. The(More)
This work is concerned with the development of a non destructive method for measuring electric charge in metal-oxide-semiconductor (MOS) components and devices. The aim is to obtain further information on microelectronics and power electronics components and, using the gate oxide state, to assess semiconductors health. Results obtained on MOS samples with(More)
The thermal-step method (TSM) is a nondestructive technique for measuring electric charge, based on the acquisition of a capacitive current appearing when a thermal step of low amplitude is applied to an insulating structure. The electrostatic modeling of a metal-oxide-semiconductor (MOS) structure while crossed by a thermal wave is addressed in this paper,(More)
  • 1