Akira Fujiwara

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We propose merged single-electron and MOS devices that serve as basic components of multiple-valued logic, such as a universal literal gate and a quantizer. We verified their operation by using single-electron transistors and MOSFETs fabricated on the same wafer by pattern-dependent oxidation process. We also discuss their application to an(More)
AIM To examine the current status and problems of resuscitation management in Japan as demonstrated at the 2006 and 2007 Osaka Senri medical rallies. METHODS Using manikins, the quality of resuscitation was evaluated in 33 teams that participated in the medical rallies. The challenge was to deliver defibrillation shocks for ventricular fibrillation; data(More)
The single-electron device (SED) is drawing a lot of attention for future large-scale integration because of its low-power nature and small size. We have developed a novel method called pattern-dependent oxidation (PADOX) for fabricating small Si single-electron transistors (SETs) and used it to make many kinds of SEDs. One of the most primitive and(More)
In conventional computers, wiring between transistors is required to enable the execution of Boolean logic functions. This has resulted in processors in which billions of transistors are physically interconnected, which limits integration densities, gives rise to huge power consumption and restricts processing speeds. A method to eliminate wiring amongst(More)
Single-electron devices (SEDs) are attracting a lot of attention as devices for future large-scale integration because of their inherent low power and small size. It is well known that SEDs have to have small islands together with tunnel barriers at both ends, which makes it difficult to make them. We have developed a novel method of fabricating small Si(More)
We report here a new type of "single-electron" memory that works as a multiple-valued SRAM. A schematic of the proposed memory is shown in Fig. 1. The source of a MOSFET with fixed gate bias V gg is connected to the drain of a single-electron transistor (SET), and the SET drain voltage is kept nearly constant around V gg-V th , where V th is the threshold(More)
A uniform array of single-grain Au nanodots, as small as 5-8 nm, can be formed on silicon using e-beam lithography. The as-fabricated nanodots are amorphous, and thermal annealing converts them to pure Au single crystals covered with a thin SiO(2) layer. These findings are based on physical measurements, such as atomic force microscopy (AFM),(More)
The valley splitting, which lifts the degeneracy of the lowest two valley states in a SiO(2)/Si(100)/SiO(2) quantum well, is examined through transport measurements. We demonstrate that the valley splitting can be observed directly as a step in the conductance defining a boundary between valley-unpolarized and -polarized regions. This persists to well above(More)
The ultimate limit in the operation of an electronic device is the manipulation of a single charge. Such a limit has been achieved in single-electron tunnelling devices. However, these devices are based on multiple tunnel barriers and conductive islands, which are complex structures to fabricate. Here we demonstrate another type of device that can also(More)