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- Publications
- Influence
A predistortion linearizer for a class-F GaN HEMT power amplifier using two independently controlled diodes
- A. Ando, Y. Takayama, Tsuyoshi Yoshida, R. Ishikawa, K. Honjo
- Materials Science
- Asia Pacific Microwave Conference
- 1 December 2009
A novel pre-distortion technique using two independently bias-controlled Schottky diodes is proposed to compensate the complicated nonlinear characteristics of the AlGaN/GaN HEMT microwave class-F… Expand
Bubble jumper: enhancing the traditional japanese sport sumo with physical augmentation
- R. Ando, A. Ando, K. Kunze, K. Minamizawa
- Computer Science
- SHS '18
- 2 July 2018
TLDR
Thickness dependences on microwave tunable properties for (Ba, Sr)TiO/sub 3/ thin films in planar capacitor structure
- K. Kageyama, A. Sakurai, A. Ando, Y. Sakabe
- Engineering
- IEEE MTT-S International Microwave Symposium…
- 12 June 2005
Ba0.6Sr0.4)TiO3 thin films of various thicknesses on sapphire-R substrate have been fabricated using the chemical solution deposition method (CSD). Inter-digitated electrode arrays in planar… Expand
A Predistortion Diode Linearizer Technique with Automatic Average Power Bias Control for a Class-F GaN HEMT Power Amplifier
- A. Ando, Y. Takayama, Tsuyoshi Yoshida, R. Ishikawa, K. Honjo
- Materials Science, Computer Science
- IEICE Trans. Electron.
- 1 July 2011
A study on control of planar variable geometry truss used for autonomous docking system
- Y. Murotsu, Akira Mitsuya, Hidefumi Kawano, A. Ando, Kei Senda
- Computer Science
- 7 April 1997
TLDR
Synthesis of Locally-Ordered Carbon Nanotube Arrays from Patterned Catalyst by Self-Assembly Technique
Site-selective growth of multi-walled carbon nanotubes (MWCNTs) from an iron oxide nanoparticle catalyst patterned by drying-mediated self-assembly technique is present. The ethanol solution of the… Expand
C-2-125 X-band Deploying Elliptic Cassegrain Antenna for a small SAR satellite
- T. Nishino, S. Kuroda, +6 authors Y. Kunii
- Physics
- 4 March 2014
Properties and Network Constitution of rf‐Sputtered Amorphous Films in the System Silicon Dioxide–Aluminum Orthophosphate
- Teiichi Hanada, A. Ando, S. Tanabe, N. Soga
- Chemistry
- 1 December 1992
Amorphous films in the system SiO2–AlPO4 were prepared by means of the rf-sputtering method, and their physical properties, such as density, refractive index, and temperature coefficient of Young's… Expand