Aijiang Lu

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Evidence is presented of a new cause of Joule heating within a simple electronic device involving a multiwalled carbon nanotube (CNT) mounted on two metal electrodes forming an electrical circuit. This time-resolved, high-resolution in situ observation of metal electrode material melting and its flow driven by the thermomigration and electromigration forces(More)
Transition metal dichalcogenides (TMDCs) have been known for decades to have unique properties and recently attracted broad attention for their two-dimensional (2D) characteristics. NbSe2 is a metallic TMDC that has been studied for its charge density wave transition behavior and superconductivity but is still largely unexplored for its potential use in(More)
The synthesis of nanoscale metal compound catalysts has attracted much research attention in the past decade. The challenges of preparation of the metal compound include the complexity of the synthesis process and difficulty of precise control of the reaction conditions. Herein, we report an in situ synthesis of nanoparticles via a high-temperature pulse(More)
A series of Ti x V1-x O2 (0%  ⩽  x  ⩽  4.48%) thin films on c-plane sapphire substrates have been fabricated by co-sputtering oxidation solutions, and the metal-insulator transition temperature (T MIT) of Ti x V1-x O2 films rises monotonically at the rate of 1.64 K/at.% Ti. The x-ray diffraction measurement results show that, after Ti4+ ion doping, the(More)
A domain wall, as a device, can bring about a revolution in developing manipulation of semiconductor heterostructures devices at the atom scale. However, it is a challenge for these new devices to control domain wall motion through insulator-metal transition of correlated-electron materials. To fully understand and harness this motion, it requires(More)
The structural and electronic properties of the CdS/ZnS core-shell nanowires (NWs) oriented along [001] direction have been investigated by means of the first-principles calculation. It is found that CdS core suffers from the compressive strain in the CdS-core/ZnS-shell NWs, and ZnS core is stretched in the ZnS-core/CdS-shell NWs. A thicker ZnS shell can(More)
The electronic properties of zincblende ZnSe/Si core-shell nanowires (NWs) with a diameter of 1.1-2.8 nm are calculated by means of the first principle calculation. Band gaps of both ZnSe-core/Si-shell and Si-core/ZnSe-shell NWs are much smaller than those of pure ZnSe or Si NWs. Band alignment analysis reveals that the small band gaps of ZnSe/Si core-shell(More)
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