Ahmedullah Aziz

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Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the(More)
We present a SPICE model for ferroelectric transistors (FEFETs) based on time-dependent Landau-Khalatnikov equation solved self-consistently with the transistor equations. The model also considers depolarization fields due to non-ideal contacts. We experimentally characterize FE films to calibrate our model, based on which we analyze the device and circuit(More)
Hyper-FET, an emerging device with unconventional characteristics, exhibits sub-kT/q switching and can attain higher ON current (<inline-formula> <tex-math notation="LaTeX">${I}_{ \mathrm{\scriptscriptstyle ON}}$ </tex-math></inline-formula>) than standard FinFETs with matched OFF current (<inline-formula> <tex-math notation="LaTeX">${I}_{(More)
Ferroelectric FETs (FEFETs) offer intriguing possibilities for the design of low power nonvolatile memories by virtue of their three-terminal structure coupled with the ability of the ferroelectric (FE) material to retain its polarization in the absence of an electric field. Utilizing the distinct features of FEFETs, we propose a 2-transistor (2T)(More)
Numerous research efforts are targeting new devices that could continue performance scaling trends associated with Moore's Law and/or accomplish computational tasks with less energy. One such device is the ferroelectric FET (FeFET), which offers the potential to be scaled beyond the end of the silicon roadmap as predicted by ITRS. Furthermore, the(More)
We present a novel technique for optimizing the read operation of spin-transfer torque (STT) MRAMs by employing a correlated material in conjunction with a magnetic tunnel junction (MTJ). The design of the proposed memory cell is based on exploiting the orders-of-magnitude difference in the resistance of the two phases of the correlated material (CM) and(More)
Nonvolatile computing has been proven to be effective in dealing with power supply outages for on-chip check-pointing in emerging energy-harvesting Internet-of-Things applications. It also plays an important role in power-gating to cut off leakage power for higher energy efficiency. However, existing on-chip state backup solutions for D flip&#x2013;flop(More)
This paper suggests two alternative schemes to avoid the use of hydraulic and pneumatic horns responsible for severe sound pollution. Cost effective signaling systems using radio frequency (RF) and infra-red (IR) have been developed and working circuitry has been implemented to replace the conventional horns. The greater impact of these signaling schemes on(More)
We present an extensive analysis of functional-oxide based selector devices for cross-point memories from the perspectives of materials through arrays. We describe the design constraints required for proper functionality of a cross-point array and translate these constraints to figures of merit for the selector materials. The proposed figures of merit,(More)
We present a hybrid multiplexing (HYM) scheme for MRAMs with separate read-write paths, employing different bit-cell selection methods during read and write based on their suitability for data sensing and switching operations. The proposed technique allows the sharing of the read access transistor among the cells belonging to the same word, leading to area(More)