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In this paper, the type, activation energy (<inline-formula> <tex-math notation="LaTeX">$\textit{E}_{a}$ </tex-math></inline-formula>) and cross section (<inline-formula> <tex-math(More)
In this paper, we attempt to characterize the low-frequency (LF) drain noise characteristics of 0.25- μ m ultra-short gate length GaN HEMT devices fabricated using different transistor technology. LF(More)
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