Agata Sakic

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An arsenic doping technique for depositing up to 40-μm-thick high-resistivity layers is presented for fabricating diodes with low RC constants that can be integrated in closely-packed configurations. The doping of the as-grown epi-layers is controlled down to 5 × 10 11 cm −3 , a value that is solely limited by the cleanness of the epitaxial reactor chamber.(More)
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