Agata Jasik

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The RT (Resonant Tunnelling) AIAs/Ino 53Ga 4.1As/l# heterostructure employed in our measurements was deposited on nominally (001) oriented I# S n+ (2x10 'cm )substrates The layer sequence was as follows (i) 600nm n+ InP.Si bottom contact layer (n=S~lO'*cm-~()i,i ) 600 nm nf Inos3Gao47As contact layer (n=5~10'*cm'~)(,i ii) 100 nm n In0 53Ga047As Si contact(More)
In this paper we present results of the numerical modelling of the temperature distribution in a GaAs-based, continuously optically pumped Vertical-External-Cavity Surface-Emitting-Laser, emitting at about 980 nm. Effectiveness of different methods of the temperature reduction in the active region, such as substrate thinning and using a heat spreader, is(More)
Thermal properties, degradation behaviour and optical and current contributions to facet heating of high power diode lasers emitting at 808 nm are analysed. The investigated devices with non-injected facets are designed to reduce carrier recombination at the facet surface. Spatially resolved thermoreflectance spectroscopy is used to measure temperature(More)
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