Agam . P . Vajpeyi

  • Citations Per Year
Learn More
Single crystalline and single phase In(x)Ga(1-x)N nanopillars were grown spontaneously on (111) silicon substrate by plasma assisted molecular beam epitaxy. The surface morphology, structural quality, and optoelectronic properties of InGaN nanopillars were analyzed using scanning electron microscopy (SEM), energy dispersive x-ray (EDXA) analysis, high(More)
— Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman scattering, scanning electron microscopy (SEM), and atomic force microscopy (AFM) techniques have been employed. SEM and AFM(More)
  • 1