Adrian H Quarterman

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We report on 260 fs transform-limited pulses generated directly by an optical Stark passively mode-locked semiconductor disk laser at a 1 GHz repetition rate. A surface recombination semiconductor saturable absorber mirror and a step-index gain structure are used. Numerical propagation modeling of the optical Stark effect confirms that this mechanism is(More)
We present a method to experimentally characterize the gain filter and calculate a corresponding parabolic gain bandwidth of lasers that are described by "class A" dynamics by solving the master equation of spectral condensation for Gaussian spectra. We experimentally determine the gain filter, with an equivalent parabolic gain bandwidth of up to 51 nm, for(More)
We report a repetition frequency tunable, passively mode-locked vertical-external-cavity surface-emitting semiconductor laser (VECSEL) with continuous repetition frequency tuning between 2.78 and 7.87 GHz using mechanical tuning of the laser cavity length. The laser emits near-transform-limited, sub-500-fs pulses over almost an octave tuning range between(More)
The interaction of an optical pulse with a quantum well saturable absorber is simulated using a semi-classical two-level-atom model which has been modified to approximate spectral hole burning in the carrier distribution. Saturable absorption behaviour is examined in the limit where pulse duration approaches the carrier-carrier scattering time. For long(More)
We report the coherent spectral broadening of the output of a mode-locked VECSEL emitting 455 fs pulses at 1007 nm in the normal-dispersion regime. Subsequent compression of the fiber outputs using a transmission grating compressor produced 1.56 GHz trains of 150 fs pulses at 270 mW average power or 220 fs pulses at 520 mW average power. The system(More)
We report what we believe to be the first demonstration of an all-semiconductor room-temperature terahertz time domain spectrometer. An optical Stark mode-locked vertical-external-cavity surface-emitting laser with 480 fs pulses at 1044 nm was used to illuminate low-temperature-grown photoconductive antennae with 5 mum-gap bow-tie-shaped electrodes. The(More)
We describe the characterization of a monolithically integrated photonic device for short pulse generation featuring a mode-locked laser diode, a Mach-Zehnder modulator (MZM), and a semiconductor optical amplifier (SOA). The integrated device is designed for fabrication by a generic foundry scheme with a view to ease of design, testing, and manufacture.(More)
Terahertz (THz) radiation can be generated by ultrafast photo-excitation of carriers in a semiconductor partly masked by a gold surface. A simulation of the effect taking into account the diffusion of carriers and the electric field shows that the total net current is approximately zero and cannot account for the THz radiation. Finite element modelling and(More)
We report the generation of high-peak-power picosecond optical pulses in the 1.55 μm spectral band from a monolithically mode-locked laser integrated with a pulse selector and power booster. High-peak-power (>1  W) pulses with durations of 15.4 ps at a 55 MHz selected rate are demonstrated, indicating that this device shows promise as a high-peak-power(More)
Introduction Unidirectional operation is desirable attribute of a ring cavity laser. In fibre or bulk form this can be realized by applying discrete optical isolation techniques within the cavity. For monolithically integrated semiconductor lasers, the first monlithic integration of an optical isolator was reported by . Takahashi in 2010 [1].(More)