Adam Podell

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Intermediate band solar cells using quantum dots (QDs) have been proposed as an approach to increasing solar cell efficiency [1]. This paper presents results of attempts to grow QDs in the GaAs middle cell of lattice matched triple junction solar cells by Metal-Organic Chemical Vapor Deposition (MOCVD). QD size and density as a function of number of layers(More)
Control of InAs critical thickness (&#x03B8;) is important to realizing optimized growth in quantum dot (QD) devices. Substrate misorientation can change the value of &#x03B8;<inf>c</inf> but also creates more uniform QDs in both size and distribution. This work explores GaAs p-i-n photovoltaic (PV) devices grown via organometallic vapor phase epitaxy(More)
Lattice matched, triple-junction solar cells with strain-compensated quantum dots (QDs) in the GaAs middle cell were grown by Metal-Organic Chemical Vapor Deposition (MOCVD). Devices with different numbers of QD layers are compared to baseline devices with no QDs. Quantum efficiency and light I-V measurements show an increase in short circuit current(More)
The use of nanostructures such as quantum dots (QD) offers tremendous potential to realize high-efficiency photovoltaic (PV) cells. The optimization of the electronic structure of the layers within the QD region should lead to improved PV performance. This includes the QD layer itself, but also the surrounding barrier and/or strain balancing layers that(More)
Substrate misorientation was investigated as a mechanism to control InAs quantum dot density and size. Results have shown that both 2&#x00B0; and 6&#x00B0; substrate misorientation toward the &lt;;110&gt;; direction can lead to high InAs QD density (4.8&#x00D7;10<sup>10</sup> cm-2) as well as suppress QD ripening. In the 6&#x00B0; misoriented samples the(More)
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