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Journals and Conferences
We report MBE growth of AlGaN structures emitting below 250 nm on SiC substrates. We found that the IQE of the MQWs and DHs is as high as 68% and 43% respectively.
We report the development of AlGaN-based deep UV LEDs by RF plasma-assisted MBE. Devices emitting at 273 nm were evaluated at bare-die configuration and found to have an output power of 1.3 mW at 100 mA injection current and external quantum efficiency of 0.4%.