Abhijit V. Chinchore

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A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with(More)
Deposition of manganese onto the gallium-rich, nitrogen-polar GaN(000 1) surface results in the formation of quantum-height island structures. Two unique island heights differing by one atomic layer are observed, including 0.93 nm high islands which are unstable against the formation of 1.13 nm high islands. A row structure at the islands’ surface suggests(More)
We present the structural and surface characterization of the alloy formation of scandium gallium nitride ScxGa1-xN(001)/MgO(001) grown by radio-frequency molecular beam epitaxy over the Sc range of x = 0-100%. In-plane diffraction measurements show a clear face-centered cubic surface structure with single-crystalline epitaxial type of growth mode for all(More)
Submonolayer quantities of Mn are deposited on wurtzite GaN 0001̄ . The surface is monitored using reflection high energy electron diffraction, which shows a pattern consisting of 3 reconstruction along 101̄0 , but only 1 along 112̄0 . Diffraction analysis shows that the 3 streak intensity is maximized at 0.86 monolayer of Mn deposition. The results(More)
In this paper, we report on the controlling of the effect of growth parameters such as substrate temperature and the ratio of Cr and N atoms on phase formation, surface morphology and crystallization of CrN(001) thin films grown by plasma-assisted molecular beam epitaxy on the MgO(001) substrate. The reflected high energy electron diffraction, atomic force(More)
Manganese deposited on the N-polar face of wurtzite gallium nitride [GaN (0001̄)] results in two unique surface reconstructions, depending on the deposition temperature. At lower temperature (less than 105 ◦C), it is found that a metastable 3 × 3 structure forms. Mild annealing of this Mn 3 × 3 structure leads to an irreversible phase transition to a(More)
Fe0.1Sc0.9N with a thickness of ~ 380 nm was grown on top of a ScN(001) buffer layer of ~ 50 nm, grown on MgO(001) substrate by radio-frequency N-plasma molecular beam epitaxy (rf-MBE). The buffer layer was grown at TS ~ 800 o C, whereas the Fe0.1Sc0.9N(001) film was grown at TS ~ 420 °C. In-situ reflection high-energy electron diffraction measurements show(More)
Adam J. Hauser and Fengyuan Yang Department of Physics, The Ohio State University, 191 Woodruff Avenue, Columbus, Ohio 43210, USA (Dated: August 22, 2010) Abstract Ferromagnetic δ-phase manganese gallium layers with Mn/(Mn + Ga) = 60% have been successfully grown on ScN(001) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on(More)
Ferromagnetic delta-phase manganese gallium with Mn:Ga ratio between 1:1 to 1.5:1 is grown on wurtzite gallium nitride and scandium nitride substrates, using molecular beam epitaxy. The dependencies of growth properties, e.g. interface formation, surface reconstruction and crystalline quality, on substrate crystallographic structure and polarity are(More)
Practical applications of semiconductor spintronic devices necessitate ferromagnetic behavior at or above room temperature. In this paper, we demonstrate a two-dimensional manganese gallium nitride surface structure (MnGaN-2D) which is atomically thin and shows ferromagnetic domain structure at room temperature as measured by spin-resolved scanning(More)