Abel Fontserè

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A variety of custom-built sample holders offer users a wide range of non-standard measurements at the ALBA synchrotron PhotoEmission Electron Microscope (PEEM) experimental station. Some of the salient features are: an ultrahigh vacuum (UHV) suitcase compatible with many offline deposition and characterization systems, built-in electromagnets for uni- or(More)
AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we(More)
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly(More)
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