Abel Fontserè

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A variety of custom-built sample holders offer users a wide range of non-standard measurements at the ALBA synchrotron PhotoEmission Electron Microscope (PEEM) experimental station. Some of the salient features are: an ultrahigh vacuum (UHV) suitcase compatible with many offline deposition and characterization systems, built-in electromagnets for uni- or(More)
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310 °C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. The low channel sheet resistance and the enhanced heat dissipation allow a highly(More)
AlGaN/GaN HEMTs are devices which are strongly influenced by surface properties such as donor states, roughness or any kind of inhomogeneity. The electron gas is only a few nanometers away from the surface and the transistor forward and reverse currents are considerably affected by any variation of surface property within the atomic scale. Consequently, we(More)
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