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In this work the temperature dependence of the electrical behavior of the amorphous silicon thin film hetero-structure solar cells such as potential and electric field and the effect of temperature on the recombination rate and photo-generation rate, through the cell is investigated. Also the effect of the various p-layer doping concentrations with… (More)
In amorphous thin film p -- i -- n solar cell, a thick absorber layer can absorb more light to generate carriers, however, a thicker i-layer degrades the drift electric field for carrier transport. On the other hand, a thin i-layer cannot absorb enough light. So Thickness of i-layer is a key parameter that can limit the performance of amorphous thin film… (More)
In this paper the effect of the absorber layer and n-layer properties such as thickness and doping concentration on the electrical characteristic of the a-Si:H/a-SiGe:H thin film hetero structure solar cells such as photo-generation rate, recombination rate and electric field through the cell is investigated. Introducing Ge atoms to the Si lattice in… (More)