Abderrazak Smatti

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N-MOSFET of 20 nm and 40 nm gate oxide thicknesses were irradiated with 60Co gamma-ray source. They were characterized by Oxide-Trap based on Charge-Pumping method (OTCP). The total dose response is shown to depend on gate oxide. In fact, the results show that the turn around effect occurs at different doses depending on oxide thickness. For a 40 nm oxide(More)
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