Abdelmadjid Benabdelmoumene

  • Citations Per Year
Learn More
Article history: Received 4 June 2012 Received in revised form 26 November 2012 Accepted 3 December 2012 Available online xxxx 0026-2714/$ see front matter 2012 Elsevier Ltd. A http://dx.doi.org/10.1016/j.microrel.2012.12.001 ⇑ Corresponding author. Tel.: +213 (0) 21 35 10 40 E-mail addresses: htahi@cdta.dz, hakimtahi@yahoo Please cite this article in press(More)
In this paper, a new method, named on the fly oxide trap (OTFOT), is proposed to extract the bias temperature instability BTI in MOS transistors. It is based on charge pumping technique (CP) at low and high frequencies. We emphasize on the theoretical-based concept, giving a clear insight on the easy-use of the OTFOT methodology and demonstrating its(More)
The identification of the microstructure defects responsible of metal-oxide-silicon field effect transistor (MOSFET) reliability problems is important to understand, the physical mechanisms behind these problems. In this paper, the effective dipole moment of bond precursors that contribute to negative bias temperature instability (NBTI) permanent components(More)
Negative and positive bias temperature instability (NBTI and PBTI) are described in the same model using the ReactionDiffusion (RD) by taking into account all protagonist diffusion hydrogenate species; hydrogen atom (H), proton (H+) and hydrogen molecular (H2). This model is based on the probability that the passivated dangling bonds at the interface of(More)
Negative bias temperature instability (NBTI) in MOS capacitors has been investigated using a novel NBTI measurement method, named two-point capacitance-voltage (TPCV). This method is based on C-V techniques and allows one to independently separate the interface (&#x0394;N<sub>it</sub>) and oxide traps (&#x0394;N<sub>ot</sub>) induced by NBTI. For the first(More)
  • 1