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Journals and Conferences
This paper presents work aimed at optimizing the fabrication of silicon nitride Si(x)N(y) thin-film visible-light planar waveguides using plasma-enhanced chemical vapour deposition (PECVD). The… (More)
Temperature measurements in AlGaN/GaN high electron mobility transistors are required for proper device design, modeling and achieving appropriate reliability. These measurements usually require… (More)
We present the various process steps that are required to build a high efficiency solar cell. We show then the advantage of plasma etching compared to saw dicing to singulate the cells.
In this letter, an AlGaN/GaN MOS-HEMT was demonstrated using a 5-nm-thick SiO<sub>x</sub> dielectric layer deposited by plasma enhanced chemical vapor deposition (PECVD) as a gate insulator. The… (More)
The design of antireflection coating (ARC) for multijunction solar cells is challenging due to the broadband absorption and the need for current matching of each subcell. Silicon nitride, which is… (More)
The high power density in AlGaN/GaN High Electron Mobility Transistors (HEMTs) can notably produce strong self-heating in the device. This effect leads to performance degradation and reliability… (More)
We propose a method to fabricate interference filters using PECVD designed to reduce the wavelengths that have a negative impact on the human health and environment inherent to LED lighting.
In this study, InAs metal-oxide-semiconductor field effect transistors (MOSFETs) ultra-thin body (UTB) were fabricated with self-aligned method. 4 nm thick Al<sub>2</sub>O<sub>3</sub> gate oxide was… (More)
To optimize the design of multi-junction photovoltaic devices, robust models of the tunnel junctions connecting sub-cells are essential. In this paper, we describe the effects of varying key… (More)
Self-heating effects in AlGaN/GaN high-electron mobility transistors (HEMTs) can notably reduce electron mobility and produce reliability concerns. Electrothermal characterization and appropriate… (More)