Aaron M Kueck

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Ultrahigh-resolution transmission electron microscopy and atomic-scale spectroscopy are used to investigate the origin of the toughness in rare-earth doped silicon carbide (RE-SiC) by examining the mechanistic nature of the intergranular cracking events which we find to occur precisely along the RE-decorated interface between the SiC grains and the(More)
In SiC sintered with Al, B and C additions (ABC–SiC), the presence of Y in the Al–Si–O–C grain-boundary phase leads to less frequent crack deflection and lower toughness. When Y is absent from the grain-boundary phase and remains in the triple pockets, crack deflection is restored, and higher toughness results from grain-bridging mechanisms. The(More)
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