Aaron M. Jones

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Monolayer group-VI transition metal dichalcogenides have recently emerged as semiconducting alternatives to graphene in which the true two-dimensionality is expected to illuminate new semiconducting physics. Here we investigate excitons and trions (their singly charged counterparts), which have thus far been challenging to generate and control in the(More)
As a consequence of degeneracies arising from crystal symmetries , it is possible for electron states at band-edges ('valleys') to have additional spin-like quantum numbers 1–6. An important question is whether coherent manipulation can be performed on such valley pseudospins, analogous to that implemented using true spin, in the quest for quantum(More)
The combination of its high electron mobility, broadband absorption and ultrafast luminescence make graphene attractive for optoelectronic and photonic applications, including transparent electrodes, mode-locked lasers and high-speed optical modulators. Photo-excited carriers that have not cooled to the temperature of the graphene lattice are known as hot(More)
Keywords: Self-assembled quantum dots Annealing Molecular beam epitaxy Scanning tunneling microscopy Transmission electron microscopy Photoluminescence InGaAs GaAs a b s t r a c t We report a study of growth and photoluminescence from a single stack of MBE-grown In 0.4 Ga 0.6 As quantum dot chains. The InGaAs epilayers were grown at a low temperature so(More)
Second order optical nonlinear processes involve the coherent mixing of two electromagnetic waves to generate a new optical frequency, which plays a central role in a variety of applications, such as ultrafast laser systems, rectifiers, modulators, and optical imaging. However, progress is limited in the mid-infrared (MIR) region due to the lack of suitable(More)
Nanostructures such as quantum dots (QDs) and QD chains have received significant attention because of their applications in quantum information technologies. This paper presents optical investigations of InGaAs QDs and dot chains. The InGaAs samples were grown on a (001) GaAs substrate by Dr. Haeyeon Yang using a novel method similar to the(More)