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Although carbon nanotube (CNT) transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will perform at sub-10 nm channel lengths. In this manuscript, we demonstrate the first sub-10 nm CNT transistor, which is shown to outperform the best competing(More)
Networks of single-walled carbon nanotubes (SWCNTs) decorated with Au-coated Pd (Au/Pd) nanocubes are employed as electrochemical biosensors that exhibit excellent sensitivity (2.6 mA mM(-1) cm(-2)) and a low estimated detection limit (2.3 nM) at a signal-to-noise ratio of 3 (S/N = 3) in the amperometric sensing of hydrogen peroxide. Biofunctionalization of(More)
Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon(More)
Neurogenesis and neuronal differentiation are determined by the NeuroD homologues, transcription factors belonging to a family of basic helix-loop-helix proteins. The authors used in situ hybridization with full-length riboprobes for NeuroD1, NeuroD2, and NeuroD3 to describe the expression of the NeuroD homologues in a gestational sequence of human fetal(More)
Among the challenges hindering the integration of carbon nanotube (CNT) transistors in digital technology are the lack of a scalable self-aligned gate and complementary n- and p-type devices. We report CNT transistors with self-aligned gates scaled down to 20 nm in the ideal gate-all-around geometry. Uniformity of the gate wrapping the nanotube channels is(More)
Carbon nanotube field-effect transistors are strong candidates in replacing or supplementing silicon technology. Although theoretical studies have projected that nanotube transistors will perform well at nanoscale device dimensions, most experimental studies have been carried out on devices that are about ten times larger than current silicon transistors.(More)
The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that(More)
While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The(More)
Carbon nanotubes (CNTs) continue to show strong promise as the channel material for an aggressively scaled, high-performance transistor technology. However, there has been concern regarding the contact resistance (Rc) in CNT field-effect transistors (CNTFETs) limiting the ultimate performance, especially at scaled contact lengths. In this work, the contact(More)
Recently, graphene field-effect transistors (FET) with cutoff frequencies (f(T)) between 100 and 300 GHz have been reported; however, the devices showed very weak drain current saturation, leading to an undesirably high output conductance (g(ds)= dI(ds)/dV(ds)). A crucial figure-of-merit for analog/RF transistors is the intrinsic voltage gain (g(m)/g(ds))(More)