Aaron D Franklin

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Although carbon nanotube (CNT) transistors have been promoted for years as a replacement for silicon technology, there is limited theoretical work and no experimental reports on how nanotubes will perform at sub-10 nm channel lengths. In this manuscript, we demonstrate the first sub-10 nm CNT transistor, which is shown to outperform the best competing(More)
Carbon nanotube field-effect transistors are strong candidates in replacing or supplementing silicon technology. Although theoretical studies have projected that nanotube transistors will perform well at nanoscale device dimensions, most experimental studies have been carried out on devices that are about ten times larger than current silicon transistors.(More)
Carbon nanotubes have potential in the development of high-speed and power-efficient logic applications. However, for such technologies to be viable, a high density of semiconducting nanotubes must be placed at precise locations on a substrate. Here, we show that ion-exchange chemistry can be used to fabricate arrays of individually positioned carbon(More)
Networks of single-walled carbon nanotubes (SWCNTs) decorated with Au-coated Pd (Au/Pd) nanocubes are employed as electrochemical biosensors that exhibit excellent sensitivity (2.6 mA mM(-1) cm(-2)) and a low estimated detection limit (2.3 nM) at a signal-to-noise ratio of 3 (S/N = 3) in the amperometric sensing of hydrogen peroxide. Biofunctionalization of(More)
Performance of graphene electronics is limited by contact resistance associated with the metal-graphene (M-G) interface, where unique transport challenges arise as carriers are injected from a 3D metal into a 2D-graphene sheet. In this work, enhanced carrier injection is experimentally achieved in graphene devices by forming cuts in the graphene within the(More)
Solution-processed single-walled carbon nanotubes (SWNTs) offer many unique processing advantages over nanotubes grown by the chemical vapor deposition (CVD) method, including capabilities of separating the nanotubes by electronic type and depositing them onto various substrates in the form of ultradensely aligned arrays at low temperature. However,(More)
Vertical single-walled and double-walled carbon nanotube (SWNT and DWNT) arrays have been grown using a catalyst embedded within the pore walls of a porous anodic alumina (PAA) template. The initial film structure consisted of a SiOx adhesion layer, a Ti layer, a bottom Al layer, a Fe layer, and a top Al layer deposited on a Si wafer. The Al and Fe layers(More)
While graphene transistors have proven capable of delivering gigahertz-range cutoff frequencies, applying the devices to RF circuits has been largely hindered by the lack of current saturation in the zero band gap graphene. Herein, the first high-frequency voltage amplifier is demonstrated using large-area chemical vapor deposition grown graphene. The(More)
The large amount of hysteresis and threshold voltage variation in carbon nanotube transistors impedes their use in highly integrated digital applications. The origin of this variability is elucidated by employing a top-coated, hydrophobic monolayer to passivate bottom-gated devices. Compared to passivating only the supporting substrate, it is found that(More)
Carbon nanotubes (CNTs) continue to show strong promise as the channel material for an aggressively scaled, high-performance transistor technology. However, there has been concern regarding the contact resistance (Rc) in CNT field-effect transistors (CNTFETs) limiting the ultimate performance, especially at scaled contact lengths. In this work, the contact(More)