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The forward and reverse bias dc characteristics, the long-term stability under forward and reverse bias, and the reverse recovery performance of 4H-SiC junction barrier Schottky (JBS) diodes that are… (More)
Ultra high power 10 kV, 50 A SiC PiN diodes have been developed with a low forward voltage drop (VF) of 3.75 V and a fast reverse recovery time of 150 nsec. This is the highest reported power rating… (More)
Silicon carbide (SiC) devices have the potential to yield new components with functional capabilities that far exceed components based on silicon devices. Selective doping of SiC by ion implantation… (More)
The path to commercializing a 4H-SiC power PiN diode has faced many difficult challenges. In this work, we report a 50 A, 10 kV 4H-SiC PiN diode technology where good crystalline quality and high… (More)