A. S. Budiman

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One key to enable the successful implementation of 3-D interconnects using Through-Silicon Via (TSV) is the control of the mechanical stresses. The synchrotron-sourced X-ray microdiffraction(More)
Soldering of copper interconnects at ∼220 °C induces residual stresses in the crystalline silicon solar cells. These residual stresses may become detrimental in the context of thinner silicon cells(More)
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