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Reverse current–temperature (IΓ/T) characteristics of Al–GaAs Schottky diodes with oxidized interfaces are measured in the temperature region of 250–400 K at various reverse bias voltage in order to… (More)
Reverse current-voltage characteristics of the Al/p-InP Schottky diodes based on Zn-doped InP epilayers were measured in relation to bias and temperature. Temperature dependence of reverse current is… (More)