A. Ouerghi

Publications103
h-index28
Citations2,262
Highly Influential Citations28
Claim Author Page
Author pages are created from data sourced from our academic publisher partnerships and public sources.

Recommended Authors

  • M. Silly
  • 148 Publications, 2,031 Citations
  • A. Cavanna
  • 159 Publications, 3,354 Citations
  • E. Lhuillier
  • 107 Publications, 1,848 Citations
  • Andre K. Geim
  • 332 Publications, 181,662 Citations
  • Publications
  • Influence
Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures.
Two-dimensional layered MoS2 shows great potential for nanoelectronic and optoelectronic devices due to its high photosensitivity, which is the result of its indirect to direct band gap transition… Expand
  • 166
  • 2
Tunable quasiparticle band gap in few-layer GaSe/graphene van der Waals heterostructures
Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and… Expand
  • 66
  • 2
  • PDF
Interface dipole and band bending in the hybrid p − n heterojunction Mo S 2 / GaN ( 0001 )
Hybrid heterostructures based on bulk GaN and two-dimensional (2D) materials offer novel paths toward nanoelectronic devices with engineered features. Here, we study the electronic properties of a… Expand
  • 26
  • 2
  • PDF
Wigner and Kondo physics in quantum point contacts revealed by scanning gate microscopy.
Quantum point contacts exhibit mysterious conductance anomalies in addition to well-known conductance plateaus at multiples of 2e(2)/h. These 0.7 and zero-bias anomalies have been intensively… Expand
  • 31
  • 2
  • PDF
Epitaxial graphene on 4H-SiC(0001) grown under nitrogen flux: evidence of low nitrogen doping and high charge transfer.
Nitrogen doping of graphene is of great interest for both fundamental research to explore the effect of dopants on a 2D electrical conductor and applications such as lithium storage, composites, and… Expand
  • 81
  • 1
  • PDF
High Electron Mobility in Epitaxial Graphene on 4H-SiC(0001) via post-growth annealing under hydrogen
We investigate the magneto-transport properties of epitaxial graphene single-layer on 4H-SiC(0001), grown by atmospheric pressure graphitization in Ar, followed by H2 intercalation. We directly… Expand
  • 113
  • 1
  • PDF
Large-area and high-quality epitaxial graphene on off-axis SiC wafers.
The growth of large and uniform graphene layers remains very challenging to this day due to the close correlation between the electronic and transport properties and the layer morphology. Here, we… Expand
  • 65
  • 1
Large area molybdenum disulphide- epitaxial graphene vertical Van der Waals heterostructures
Two-dimensional layered transition metal dichalcogenides (TMDCs) show great potential for optoelectronic devices due to their electronic and optical properties. A metal-semiconductor interface, as… Expand
  • 54
  • 1
  • PDF
Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide.
Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect… Expand
  • 38
  • 1
  • PDF
Surface morphology and characterization of thin graphene films on SiC vicinal substrate
In this Brief Report we present a study of a 6H-SiC(0001) vicinal substrate annealed at various temperatures under ultrahigh vacuum. By combining x-ray photoelectron spectroscopy and atomic force… Expand
  • 66
  • 1