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Continuous wave operation of 1.26 [micro sign]m GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition
Electrically pumped near 1.3 /spl mu/m GaInNAs/GaAs vertical-cavity surface-emitting lasers grown by metalorganic chemical vapour deposition are demonstrated for the first time. The threshold currentExpand
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Record low-threshold index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure
An index-guided InGaAs/GaAlAs vertical-cavity surface-emitting laser with a native oxide confinement structure has been proposed and fabricated. A record threshold current of 70 µA was achieved withExpand
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Growth of highly strained GaInAs-GaAs quantum wells on patterned substrate and its application for multiple-wavelength vertical-cavity surface-emitting laser array
We carried out the growth of highly strained GaInAs-GaAs quantum wells (QWs) on a patterned substrate for extending emission wavelength on a GaAs substrate. We examined the shift of photoluminescenceExpand
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850 nm transverse-coupled-cavity vertical-cavity surface-emitting laser with direct modulation bandwidth of over 30 GHz
An 850-nm-band transverse-coupled-cavity vertical-cavity surface-emitting laser (VCSEL) is demonstrated for the first time, showing a 3 dB modulation bandwidth of over 30 GHz, which is the record forExpand
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Highly angular dependent high-contrast grating mirror and its application for transverse-mode control of VCSELs
We report on the design and fabrication of a highly angular dependent high contrast grating (HCG) mirror. The modeling and experiment on amorphous-Si/SiO2 HCG clearly show the large angular Expand
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Asymmetric transport property of fluorinated graphene
Carrier transport properties of fluorinated graphene with various fluorination rates are presented. Onset of transition from insulating to metallic conduction is observed in dilute fluorinatedExpand
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Data transmission over single-mode fiber by using 1.2-μm uncooled GaInAs-GaAs laser for Gb/s local area network
We demonstrate 2-Gb/s data transmission through a 5-km-long standard single-mode fiber by using a GaAs-based 1.2-/spl mu/m GaInAs-GaAs quantum well laser. The fabricated laser exhibits a highExpand
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Compact Wavelength Selective Switch Using a Bragg Reflector Waveguide Array With Ultra-Large Number (>100) of Output Ports
A wavelength selective switch (WSS) is proposed based on a Bragg reflector waveguide array, which has a footprint of only 2 × 6 mm2. We demonstrated arbitrary switching among 182 output ports byExpand
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Micromachined GaAs/AlGaAs Resonant-Cavity Light Emitter with Small Temperature Dependence of Emission Wavelength
We present the design of novel micromachined vertical-cavity light emitters/lasers with a thermal strain control layer for temperature-insensitive operations. The temperature dependence of a resonantExpand
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