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Semiconductor Spintronics
Spintronics refers commonly to phenomena in which the spin of electrons in a solid state environment plays the determining role. In a more narrow sense spintronics is an emerging research field of
Anisotropic tunneling magnetoresistance and tunneling anisotropic magnetoresistance: spin-orbit coupling in magnetic tunnel junctions
The effects of the spin-orbit coupling (SOC) on the tunneling magnetoresistance of ferromagnet/semiconductor/normal-metal tunnel junctions are investigated. Analytical expressions for the tunneling
Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions.
The observation of tunneling anisotropic magnetoresistance effect in the epitaxial metal-semiconductor system Fe/GaAs/Au suggests that the effect originates from the interference of the spin-orbit coupling at the interfaces.
Coulomb drag between massless and massive fermions
We theoretically investigate the frictional drag induced by the Coulomb interaction between spa- tially separated massless and massive fermions at low temperatures. As a model system, we use a
Spin-orbit coupling mediated spin torque in a single ferromagnetic layer
By considering a linear in momentum but otherwise arbitrary spin-orbit coupling (SOC), we derive a simple analytical expression for the current-driven spin torque in a single ferromagnetic layer.
Tunneling Anomalous and Spin Hall Effects.
The anomalous Hall effect is predicted when a tunneling current flows through a tunnel junction in which only one of the electrodes is magnetic, resulting in a skew tunneling even in the absence of impurities.
Emergence of spin–orbit fields in magnetotransport of quasi-two-dimensional iron on gallium arsenide
This work traces the interface-to-bulk transition, and follows the emergence of the interfacial spin–orbit fields, in the conducting states of a few monolayers of iron on top of gallium arsenide, as the epitaxially grown iron channel increases from four to eight monolayer.
Angular dependence of the tunneling anisotropic magnetoresistance in magnetic tunnel junctions
Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of
Magnetoanisotropic Andreev reflection in ferromagnet-superconductor junctions.
The results show that Andreev reflection spectroscopy can be used for sensitive probing of interfacial spin-orbit fields in a FS junction and predicts a giant in- and out-of-plane magnetoanisotropy of the junction conductance.