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Absorption and piezoabsorption spectra of GaAs:Co2+ have been measured at T=2K up to sigma =700 MPa. From the zero-phonon line (ZPL) of the 4A2(F) to 4T1(P) transition splittings, when stress is… (More)
The results of optical absorption experiments on proton‐ and deuteron‐implanted indium phosphide are reported. It is shown that these implantations produce two types of hydrogen‐ (or deuterium‐)… (More)
The absorption spectrum of n-type GaAs:Cr, in which the Cr2+ EPR signal remains stable under illumination, was measured under hydrostatic pressure up to 10 kbar at liquid nitrogen temperature. The… (More)
The photoionization absorption spectrum of the strongly Cr-doped GaAs samples was measured in the energy region 5 500-11 000 cm-1 under hydrostatic pressure up to 9 kbar at 300 K and 77 K. The EPR… (More)
The observed dependence between the Racah parameter B for Co2+ ions in crystals and the Phillips electronegativity of anions are presented.
The hydrostatic pressure coefficients of V3+/2+ acceptor level in bulk GaAs and of the 0.48 eV trap (related to Νi 2 +/ 1 + double acceptor level) in VPE GaAs were measured by means of the DLTS… (More)