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1/f noise and related surface effects in germanium
Thesis (Sc. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering, 1955.
SEMICONDUCTOR MASER OF GaAs
Comparison of a rate-equation model with experiment for the resonant tunneling diode in the scattering-dominated regime
A quasistatic rate-equation model for the resonant tunneling diode (RTD) is presented. In this model, the RTD is divided into three regions, each assumed in quasithermal equilibrium. The electronExpand
Raman Scattering from Spin — Density Fluctuations in n — Ga As
The anomalously large cross sections observed for scattering from single-electron excitations in GaAs can be explained in part as scattering from spin-density fluctuations. The electromagnetic fieldExpand
Magneto-Tunneling in InSb
Channels and Excess Reverse Current in Grown Germanium p-n Junction Diodes
Measurements have been made on grown germanium p-n junction diodes in an attempt to correlate the excess reverse current that occurs under exposure to water vapor with the presence of an n-typeExpand
The Cryosar-A New Low-Temperature Computer Component
The cryosar is a high-speed two-terminal computer component whose operation, at liquid helium temperature (4.2°K), is based on impact ionization of impurities in germanium. Two types of cryosars areExpand
Solid-State Maser Amplifier
The operation of a solid-state maser amplifier at 2800 Mc/sec is described. A dual-frequency cavity containing paramagnetic potassium chromicyanide in an isomorphous cobalt diluent is used at 1.25°K.Expand
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