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Investigation of 20% scandium-doped aluminum nitride films for MEMS laterally vibrating resonators
This paper reports on the investigation of 1 μm thick films of 20% Scandium-doped Aluminum Nitride (ScAlN) for the making of piezoelectric MEMS laterally vibrating resonators (LVRs). The ScAlN films,Expand
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X-Cut Lithium Niobate Laterally Vibrating MEMS Resonator With Figure of Merit of 1560
This letter reports on the design, fabrication, and testing of an X-cut lithium niobate laterally vibrating resonator operating around 50 MHz and exhibiting a record figure of merit–FoM = product ofExpand
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Laterally vibrating lithium niobate MEMS resonators with 30% electromechanical coupling coefficient
This paper demonstrates laterally vibrating lithium niobate (LN) microelectromechanical (MEMS) resonators operating at 500 MHz with an electromechanical coupling coefficient (kt2) around 30% — theExpand
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Investigation of Electromechanical Coupling and Quality Factor of X-Cut Lithium Niobate Laterally Vibrating Resonators Operating Around 400 MHz
In this paper we present laterally vibrating resonators (LVRs) based on X-cut lithium niobate (LN) exhibiting a maximum quality factor <inline-formula> <tex-math notation="LaTeX">$({Q})$Expand
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Resonant Microelectromechanical Receiver
This paper reports a practical demonstration of a proposed resonant microelectromechanical receiver for low power wake-up receiver (WuRx) applications. The proposed system is made of three mainExpand
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Ultra-low-power and high sensitivity resonant micromechanical receiver
This paper describes the proposed architecture and the analytical optimization of an ultra-low-power and high sensitivity Resonant Micromechanical Receiver (RMR) to be used in wake-up radios. TheExpand
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Experimental investigation of damping factors in 20% scandium-doped aluminum nitride laterally vibrating resonators
This paper reports experimental investigation of damping factors for 20% Scandium-doped Aluminum Nitride (ScAlN) laterally vibrating resonators (LVRs). ScAlN films for LVRs are very promising sinceExpand
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Monolithic fabrication of film bulk acoustic resonators above integrated circuit by adhesive-bonding-based film transfer
An integration process for the fabrication of thin film bulk acoustic wave resonator (FBAR) above the CMOS IC is proposed. An adhesive-bonding-based film transfer technique is utilized to transferExpand
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Delay lines based on a suspended thin film of X-cut lithium niobate
We report on the fabrication, experimental characterization, and theoretical modeling of delay lines fabricated on a lithium niobate X-cut thin film substrate. We demonstrate the feasibility ofExpand
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Integration of bottom electrode in Y-cut lithium niobate thin films for high electromechanical coupling and high capacitance per unit area MEMS resonators
This paper reports the integration of a bottom electrode in thin films of Y-cut lithium niobate (LN) on silicon to demonstrate high performance lamb-wave (S0 mode) and thickness-shear-mode (TSM)Expand
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