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A 1.2 GHz Alpha microprocessor with 44.8 GB/s chip pin bandwidth
TLDR
A 4th-generation Alpha microprocessor running at 1.2 GHz delivers up to 44.8 GB/s chip pin bandwidth and dissipates 125 W at1.5 V. Expand
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Structural and Optical Properties of Aluminium Antimonide Thin Films Deposited By Thermal Evaporation Method
Thin films having different thicknesses of AlSb were deposited by thermal evaporation technique onto precleaned amorphous glass substrate. The structural properties of films were evaluated by XRD,Expand
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Structural and Electrical properties of Thermally Evaporated Nanostructured CuInSe Thin Films
Nano structured thin films having different thickness of CuInSe were deposited by thermal evaporation techniques, onto precleaned amorphous glass substrate at room temperature. The structuralExpand
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Surface morphological and thermo electical properties of In0.3Sb0.7 thin film
Thin films having different thickness of InSb were deposited by thermal evaporation techniques, onto precleaned amorphous glass substrate. The surface morphological properties of films wereExpand
Structural and optical properties of Pb0.8In0.2Se thin films
Pb0.8In0.2Se thin films were prepared on glass substrate by vacuum evaporation technique at a pressure of 10-5 torr. The structural properties of films were evaluated by XRD, EDAX, and opticalExpand
Thermoelectric Properties of Vacuum Evaporated Indium Selenide Thin Films
InSe thin films were prepared on glass substrate by vacuum evaporation technique at a pressure of 10-5 torr. The thermo electric properties of the films was determined over the thickness range ofExpand
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Significance of Pass Transistor Logic in Organic Electronic Circuits
TLDR
In the field of renewable energy harnessing Organic electronics has opened enormous possibilities as it is more environment friendly in comparison to silicon. Expand
Structural and Electrical Properties of InSe Thin Films Deposited by Physical Evaporation Technique
InSe thin films were prepared onto precleaned glass substrate by physical evaporation technique at a pressure of 10−5 torr. The structural properties of thin films were evaluated by XRD, TransmissionExpand