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Interpretation of Raman spectra of disordered and amorphous carbon
The model and theoretical understanding of the Raman spectra in disordered and amorphous carbon are given. The nature of the G and D vibration modes in graphite is analyzed in terms of the resonant
Raman spectrum of graphene and graphene layers.
This work shows that graphene's electronic structure is captured in its Raman spectrum that clearly evolves with the number of layers, and allows unambiguous, high-throughput, nondestructive identification of graphene layers, which is critically lacking in this emerging research area.
Raman spectroscopy as a versatile tool for studying the properties of graphene.
The state of the art, future directions and open questions in Raman spectroscopy of graphene are reviewed, and essential physical processes whose importance has only recently been recognized are described.
High-yield production of graphene by liquid-phase exfoliation of graphite.
Graphene dispersions with concentrations up to approximately 0.01 mg ml(-1), produced by dispersion and exfoliation of graphite in organic solvents such as N-methyl-pyrrolidone are demonstrated.
Graphene Photonics and Optoelectroncs
Graphene has great potential in photonics and optoelectronics. I will review the state of the art in this emerging field of research, focussing on flexible and transparent conductors,
Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane
This work illustrates the concept of graphene as a robust atomic-scale scaffold on the basis of which new two-dimensional crystals with designed electronic and other properties can be created by attaching other atoms and molecules.
Raman spectroscopy of amorphous, nanostructured, diamond–like carbon, and nanodiamond
It is shown how to use resonant Raman spectroscopy to determine structure and composition of carbon films with and without nitrogen, and the assignment of the peaks at 1150 and 1480 cm−1 often observed in nanodiamond.
Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor.
This work demonstrates a top-gated graphene transistor that is able to reach doping levels of up to 5x1013 cm-2, which is much higher than those previously reported.
Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
We uncover the constitutive relation of graphene and probe the physics of its optical phonons by studying its Raman spectrum as a function of uniaxial strain. We find that the doubly degenerate E(2g)