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In situ atomic-scale imaging of electrochemical lithiation in silicon.
It is shown that in situ transmission electron microscopy can be used to study the dynamic lithiation process of single-crystal silicon with atomic resolution and observe a sharp interface between the crystalline silicon and an amorphous Li(x)Si alloy.
The joint automated repository for various integrated simulations (JARVIS) for data-driven materials design
The Joint Automated Repository for Various Integrated Simulations (JARVIS) is an integrated infrastructure to accelerate materials discovery and design using density functional theory (DFT),
Selective streptavidin bioconjugation on silicon and silicon carbide nanowires for biosensor applications
Inhibition of nonspecific BSA binding and enhancement of selective SA binding were achieved on biotinylated NWs, and the biofunctionalized NWs have the potential to be used as biosensing platforms for the specific and selective detection of proteins.
Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.
Temperature-dependent electrical characteristics and low-frequency noise in chemical vapor deposited (CVD) single-layer molybdenum disulfide based back-gated field-effect transistors (FETs) and the effect of top-surface passivation etching on the electrical characteristics of the device are studied.
The structural phases and vibrational properties of Mo1-xWxTe2 alloys.
Observations reveal the important role of disorder in Mo1-xWxTe2 alloys, clarify the structural phase boundaries, and provide a foundation for future explorations of phase transitions and electronic phenomena in this system.
Transfer characteristics and low-frequency noise in single- and multi-layer MoS2 field-effect transistors
Leveraging nanoscale field-effect transistors (FETs) in integrated circuits depends heavily on its transfer characteristics and low-frequency noise (LFN) properties. Here, we report the transfer
Refractive index study of AlxGa1−xN films grown on sapphire substrates
A prism coupling method was used to measure the ordinary (no) and extraordinary (ne) refractive indices of AlxGa1−xN films, grown by hydride vapor phase epitaxy (HVPE) and metalorganic chemical vapor
GaN Nanowires Grown by Molecular Beam Epitaxy
The unique properties of GaN nanowires grown by molecular beam epitaxy are reviewed. These properties include the absence of residual strain, exclusion of most extended defects, long
Tapering control of Si nanowires grown from SiCl₄ at reduced pressure.
It is found that the uncatalyzed Si deposition on NW sidewalls, defined by a radial growth rate, can be enhanced by lowering SiCl(4)/H(2) molar ratio, applying higher gas flow rate, or reducing growth pressure.