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High-power AlGaN/GaN HEMTs for Ka-band applications
We report on the fabrication and high-frequency characterization of AlGaN/GaN high-electron mobility transistors (HEMTs) grown by molecular beam epitaxy (MBE) and metal-organic chemical vaporExpand
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High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
A self-aligned "slant-field-plate" technology is presented as an improvement over the discrete multiple field plates for high breakdown voltage AlGaN/GaN HEMTs. Devices were tested in Fluorinert toExpand
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Adversarial Attacks and Defences: A Survey
Deep learning is a branch of machine learning that enables computational models composed of multiple processing layers with high level of abstraction to learn from experience and perceive the world in terms of hierarchy. Expand
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Influence of the dynamic access resistance in the g/sub m/ and f/sub T/ linearity of AlGaN/GaN HEMTs
The decrease of transconductance g/sub m/ and current gain cutoff frequency f/sub T/ at high drain current levels in AlGaN/GaN high-electron mobility transistors (HEMTs) severely limits the linearityExpand
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AlGaN/GaN high electron mobility transistors with InGaN back-barriers
A GaN/ultrathin InGaN/GaN heterojunction has been used to provide a back-barrier to the electrons in an AlGaN/GaN high-electron mobility transistor (HEMT). The polarization-induced electric fields inExpand
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Opening and Closing of the Bacterial RNA Polymerase Clamp
Clamping Down Crystal structures of RNA polymerase show that a “clamp” region which surrounds the DNA binding site can adopt conformations ranging from a closed to an open state. Chakraborty et al.Expand
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High-performance E-mode AlGaN/GaN HEMTs
Enhancement-mode AlGaN/GaN high electron-mobility transistors have been fabricated with a gate length of 160 nm. The use of gate recess combined with a fluorine-based surface treatment under the gateExpand
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A Context-Aware Delayed Agglomeration Framework for Electron Microscopy Segmentation
Electron Microscopy (EM) image (or volume) segmentation has become significantly important in recent years as an instrument for connectomics. This paper proposes a novel agglomerative framework forExpand
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Adaptive cell segmentation and tracking for volumetric confocal microscopy images of a developing plant meristem.
Automated segmentation and tracking of cells in actively developing tissues can provide high-throughput and quantitative spatiotemporal measurements of a range of cell behaviors; cell expansion andExpand
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The effect of gate leakage on the noise figure of AlGaN/GaN HEMTs
The effect of gate leakage on the noise figure of AlGaN/GaN high electron mobility transistor (HEMTs) is explored. It is shown that these devices have a sizable amount of gate leakage that cannot beExpand
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