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Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
We report values of pseudodielectric functions $〈\ensuremath{\epsilon}〉=〈{\ensuremath{\epsilon}}_{1}〉+i〈{\ensuremath{\epsilon}}_{2}〉$ measured by spectroscopic ellipsometry and refractive indicesExpand
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Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs
We perform an accuracy analysis of several possible reflectance–difference (RD) configurations that are compatible with standard molecular‐beam epitaxy (MBE) growth chambers, and describe in detailExpand
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High precision scanning ellipsometer.
We describe the design, construction, alignment, and calibration of a photometric ellipsometer of the rotating-analyzer type. Data are obtained by digital sampling of the transmitted flux with anExpand
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Dielectric properties of heavily doped crystalline and amorphous silicon from 1.5 to 6.0 eV
Extremely uniform, microscopically smooth, large-grained polycrystalline Si films saturation doped with phosphorous to a carrier concentration $n=3.3\ifmmode\times\else\texttimes\fi{}{10}^{20}$Expand
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Oscillations in the optical response of (001)GaAs and AlGaAs surfaces during crystal growth by molecular beam epitaxy
Upon initiation of growth by molecular beam epitaxy, reflectance‐difference (RD) signals for (001)GaAs and AlAs surfaces exhibit a cyclic component that is periodic with (001) atomic bilayer coverageExpand
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Reflectance–difference studies of organometallic chemical vapor deposition growth transients on (001) GaAs
Using reflectance–difference spectroscopy to follow surface coverage on a submonolayer scale, alternating trimethylgallium (TMG) and arsine flows to separate their surface‐chemical effects and toExpand
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Methods for drift stabilization and photomultiplier linearization for photometric ellipsometers and polarimeters.
We describe simple modifications to photometric polarimeter and ellipsometer systems that greatly reduce nonlinearity, component drift, and digital noise effects. A photomultiplier feedback circuitExpand
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Geometrically exact ellipsometer alignment.
A procedure is outlined in which the symmetry of the ellipsometer is used to provide the information needed for its own alignment. Alignment is based upon four null measurements taken on aExpand
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