A. Uedono

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Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs), with a low dielectric constant (k-value) and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum(More)
Point defects introduced by homoepitaxial growth of thin films on SrTiO<inf>3</inf> substrates were studied by means of positron annihilation. The SrTiO<inf>3</inf> films were grown by molecular-beam epitaxy (MBE) without using an oxidant. The line-shape parameter S was found to be increased by the growth of the film, which was attributed to the diffusion(More)
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