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Group-III-nitride semiconductors have shown enormous potential as light sources for full-colour displays, optical storage and solid-state lighting. Remarkably, InGaN blue- and green-light-emitting diodes (LEDs) emit brilliant light although the threading dislocation density generated due to lattice mismatch is six orders of magnitude higher than that in(More)
Understanding how the size, charge and number of available pores in porous material influences the uptake and release properties is important for optimising their design and ultimately their application. Unfortunately there are no standard methods for screening porous materials in solution and therefore formulations must be developed for each encapsulated(More)
Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs), with a low dielectric constant (k-value) and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum(More)
This article presents a short history and the recent advancement of the development of chemical vapor deposition technologies to form thin film gas barrier coatings on PET bottles and other plastic containers in food and beverage containers. Among different gas barrier enhancement technologies, coating can show unique performance where relatively high gas(More)
Planar vacuum-fluorescent-display devices emitting polarized UV-C, blue, and green light are demonstrated using immiscible Al1-x Inx N nanostructures grown in nonpolar m-directions. Despite the presence of high concentration of nonradiative recombination centers, the Al1-x Inx N nanostructures emit polarized light with the luminescence lifetimes of 22-32 ps(More)
The precision measurement system of the Doppler broadening profiles of positron annihilation radiations using a simultaneous and comparative detection technique has been developed and was applied to the study of grown-in defects in indium phosphide (InP). Annihilation energy spectra in the specimen to be examined and in a standard one were simultaneously(More)
Point defects introduced by homoepitaxial growth of thin films on SrTiO<inf>3</inf> substrates were studied by means of positron annihilation. The SrTiO<inf>3</inf> films were grown by molecular-beam epitaxy (MBE) without using an oxidant. The line-shape parameter S was found to be increased by the growth of the film, which was attributed to the diffusion(More)
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