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In this work, silicon-rich silicon nitride (SRN) layers were deposited on a silicon wafer by microwave-assisted plasma-enhanced chemical vapor deposition (MW-PECVD) using NH(3) and SiH(4) as precursor gases. The Si excess in the as-deposited layers as determined by the Rutherford backscattering technique was controlled by varying the precursor gas ratio. We(More)
This work reports on the structural and optical properties of multilayers composed of silicon dioxide (SiO2) and silicon rich silicon nitride (SRN) films. These nanometer scale layers have been alternately deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR-PECVD) on quartz and silicon (Si) substrates. The samples have(More)
We investigated the morphological and structural change in silicon nanostructures embedded in the silicon oxynitride matrix. The study has been carried out on thin films thermally annealed at high temperature, after deposition at 400°C by Electron Cyclotron Resonance Plasma Enhanced Chemical Vapour Deposition (ECR‐ PECVD), under different deposition(More)
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