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MOS-controlled thyristor (MCT) characterizations, as they relate to their dynamic performance during zero voltage switching, are reviewed. A test circuit that enables characterization of the zero voltage turn-on and turn-off losses of the device is described. Behavior models are presented and evaluated to predict the MCT turn-off losses under various(More)
  • A. Radun
  • Conference Record of the IEEE Industry…
  • 1989
An advanced-development, variable-speed, 120 hp motor drive system for an electric-motor-driven, large aircraft engine fuel pump application is described. The system is designed to demonstrate advanced technologies that allow the design of motor drive systems with the necessary power densities, reliability, and environmental specifications for aerospace(More)
Switched reluctance motor (SRM) performance prediction requires the modeling of iron losses. The iron loss model in this paper separates the iron losses into two components, eddy-current and hysteresis losses, and models the losses as a function of the derivative of flux density. The model is suitable for the nonsinusoidal flux densities in the SRM and(More)
This paper presents a method to measure the flux linkage curves of a switched reluctance motor (SRM) that avoids the inherent errors introduced by iron and copper losses using the classic method of applying a voltage to the phase of the SRM and integrating it, minus a resistive voltage drop to get the flux. In the proposed method, the flux is computed from(More)
The performance of twelve parallel MOS-controlled thyristors (MCTs) in a resonant DC-link circuit is described. Each individual MCT device, with an active area of 0.4 cm/sup 2/, is rated at 80 A and 600 volts. Four MCTs were paralleled to form a switch for a resonant inverter circuit. The criteria for good static and dynamic current sharing are identified(More)
The authors describe a high-speed, soft-recovery power rectifier that is aimed at high-frequency switching applications. The device integrates a p-i-n region in parallel with a Schottky region to provide soft and fast recovery characteristics. Two-dimensional computer simulations were performed to analyze this device for a blocking voltage of 820 V. An(More)
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