Sorry, we do not have enough data to show an influence graph for this author.
- Full text PDF available (0)
Journals and Conferences
In this paper, we demonstrate for the first time via technology computer aided design (TCAD), the enhancement in both the ac and dc performances for process-induced strained-Si MOSFETs over bulk-Si and a comparison of process-induced strained and substrate-induced strained-Si MOSFETs. In addition, we present the hot-electron degradation characteristics for… (More)