A. R. Hamilton

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Solid-state quantum computer architectures with qubits encoded using single atoms are now feasible given recent advances in atomic doping of semiconductors. Here we present a charge qubit consisting of two dopant atoms in a semiconductor crystal, one of which is singly ionised. Surface electrodes control the qubit and a radiofrequency single electron(More)
Andrew D. Greentree,1,2 Jared H. Cole,1 A. R. Hamilton,2 and Lloyd C. L. Hollenberg1 1Centre for Quantum Computer Technology, School of Physics, The University of Melbourne, Melbourne, Victoria 3010, Australia 2Centre for Quantum Computer Technology, School of Physics, The University of New South Wales, Sydney, New South Wales 2052, Australia (Received 18(More)
The radio-frequency single-electron transistor srf-SETd possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1 / f and telegraph charge noise. For a typical spectrum of 1/ f noise we find that high fidelity, single-shot measurements(More)
A. P. Micolich1,∗, A. M. See1, B. C. Scannell2, C. A. Marlow2, T. P. Martin1,2,∗∗, I. Pilgrim2, A. R. Hamilton1, H. Linke3, and R. P. Taylor2 1 School of Physics, The University of New South Wales, Sydney NSW 2052, Australia 2 Materials Science Institute, Physics Department, University of Oregon, Eugene OR 97403-1274, USA 3 Solid State Physics and nmC@LU,(More)
We report on the ability to fabricate arrays of planar, nanoscale, highly doped phosphorus dots in silicon separated by source and drain electrodes using scanning tunneling microscope lithography. We correlate ex situ electrical measurements with scanning tunneling microscope (STM) images of these devices and show that ohmic conduction can be achieved(More)
This paper presents an alternate way of making elastomer transistor stamps and high-mobility organic field-effect transistors. In particular, the authors have removed the need to prepare and use a silanised Si wafer for curing the stamps, and the need to handle a fragile micron-thickness polydimethylsiloxane (PDMS) film and laminate it, bubble free, against(More)
We report the cryogenic-temperature electrical measurements of a planar silicon metal-oxide-semiconductor (MOS) based single hole transistor. A multi-layer gate electrode architecture allows independent control of hole densities in the leads and quantum dot. Stable Coulomb blockade oscillations are observed over a large range with minimal hysteresis.(More)
In this paper we present the design, assembly and characterization of a low temperature sample rotation system based upon a commercial, electrically controlled piezo rotator. This rotation system allows for samples to be rotated through angles greater than 100° within the 39mm sample space of our Kelvinox100 dilution refrigerator, whilst maintaining(More)
Gate instability and hysteresis in Si-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum computing to novel spin physics. We report an extended study conducted using matched n-type and p-type heterostructures, with and without insulated gates, aimed at understanding the(More)